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Power F-MOS FETs
2SK3049
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
9.90.3 4.60.2 2.90.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.00.5
3.20.1
13.70.2 4.20.2
1.40.2 1.60.2 0.80.1
3.00.5
2.60.1
0.550.15
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 30 5 10 62.5 40 2 150 -55 to +150 Unit V V A A mJ W C C
1 2
2.540.3 3 5.080.5
1: Gate 2: Drain 3: Source TO-220D Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25C Ta = 25C
L = 5mH, IL = 5A, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VDD = 200V, ID = 3A VGS = 10V, RL = 66.6 Conditions VDS = 480V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 1200 VDS = 20V, VGS = 0, f = 1MHz 140 40 20 30 150 50 1.7 600 2 0.85 3.4 -1.6 5 1.5 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns ns
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time
1
Power F-MOS FETs
Area of safe operation (ASO)
100 30 10 t=1ms 3 1 0.3 100ms 0.1 0.03 0.01 1 3 10 30 100 300 1000 DC 10ms 60
2SK3049
PD Ta
10 (1) TC=Ta (2) Without heat sink IAS max.
IAS L-load
TC=25C
Allowable power dissipation PD (W)
Non repetitive pulse TC=25C
Avalanche current IAS (A)
50
3
62.5mJ
Drain current ID (A)
40 (1) 30
1
0.3
20
0.1
10 (2) 0 0 20 40 60 80 100 120 140 160
0.03
0.01 0.1
0.3
1
3
10
Drain to source voltage VDS (V)
Ambient temperature Ta (C)
L-load (mH)
ID VGS
VDS=25V
RDS(on) ID
Drain to source ON-resistance RDS(on) ()
2.5 5
| Yfs | ID
Forward transfer admittance |Yfs| (S)
VGS=10V VDS=25V TC=0C 4 25C 100C 3
10
8
2.0
TC=100C
Drain current ID (A)
TC=100C 6
1.5 25C 1.0 0C
4
25C 0C
2
2
0.5
1
0 0 2 4 6 8 10
0 0 2 4 6 8
0 0 2 4 6 8
Gate to source voltage VGS (V)
Drain current ID (A)
Drain current ID (A)
Rth(t) t
102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1)
Thermal resistance Rth(t) (C/W)
10
(2)
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
2

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